收藏本站
December 2013
FCH47N60
N-Channel SuperFET ? MOSFET
600 V, 47 A, 70 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 58 m Ω
? Ultra Low Gate Charge (Typ. Q g = 210 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 420 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
G
D
S
TO-247
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCH47N60_F133
600
Unit
V
I D
Drain Current
Continuous (T C = 25°C)
Continuous (T C = 100°C)
47
29.7
A
I DM
V GSS
Drain Current
Gate to Source Voltage
Pulsed
(Note 1)
141
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25°C)
Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1800
47
41.7
4.5
417
3.33
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FCH47N60_F133
0.3
0.24
41.7
Unit
°C/W
°C/W
°C/W
?2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCH47N60F_F133 MOSFET N-CH 600V 47A TO-247
FCH47N60NF MOSFET N-CH 600V 45.8A TO-247
FCH47N60N MOSFET N-CH 600V 47A TO-247
FCH76N60NF MOSFET N-CH 600V 72.8A TO247-3
FCH76N60N MOSFET N-CH 600V 76A TO-247
FCI25N60N MOSFET N-CH 600V 25A I2PAK
FCI7N60 MOSFET N-CH 600V 7A I2PAK
FCLF8522P2BTL COPPER SFP TXRX 1.25GB/S
相关代理商/技术参数
FCH47N60F 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60F_0605 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FCH47N60F_13 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SuperFET FRFET MOSFET
FCH47N60F_F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 47A TO-247
FCH47N60F_F133 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60N 功能描述:MOSFET 600V N-Chan MOSFET SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH47N60N_1112 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FCH47N60NF 功能描述:MOSFET 600V N-Chan MOSFET FRFET, SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube